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Thesis/Dissertation Seminars

Dissertation Defense: Growth and Doping of MoS2 Thin Films for Electronic and Optoelectronic Applications

PSB 445
October 16, 2017 @ 10:00 AM - 12:00 PM

Announcing the Final Examination of Hussain Abouelkhair for the Degree of Doctor of Philosophy in Physics

MoS2 high absorption coefficient, high mobility, mechanical flexibility, and chemical inertness is very promising for many electronic and optoelectronic applications. The growth of high-quality MoS2 by a scalable and doping compatible method is still lacking. Therefore, the suitable dopants for MoS2 are not fully explored yet. This dissertation consists mainly of four main studies.

The first study is on the growth of MoS2 thin films by atmospheric pressure chemical vapor deposition (APCVD). Scanning electron microscope images of these films revealed the growth of randomly distributed microdomes of MoS2 on top of a smooth MoS2 film. These microdomes are very promising as a broadband omnidirectional light trap for light harvesting applications. The aim of the second study is to grow MoS2 thin films by low-pressure chemical vapor deposition (LPCVD) using a doping compatible process. Control of sulfur vapor flow is essential for the growth of a pure phase of MoS2. Turning off sulfur vapor flow during the cooling cycle at 700 ℃ leads to the growth of highly textured MoS2 with a Hall mobility of 20 cm2/Vs.

The third study is on the growth of Ti-doped MoS2 thin films by LPCVD. The successful doping is confirmed by Hall effect measurement and secondary ion mass spectrometry (SIMS). Different growth temperatures from 1000 to 700 ℃ were studied. Ti acts as a donor in MoS2. The fourth study is on fluorine-doped SnO2 (FTO) which has many technological applications including solar cells and transistors. FTO was grown by an aqueous-spray-based method. The main objective was to compare the actual against the nominal concentration of fluorine using SIMS. The achieved fluorine concentration is proportional to the amount added to the solution but lower by a factor of ∼30.

Committee in Charge: Robert Peale (Chair), Sergey Stolbov, William Kaden, Kevin Coffey


 

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